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Chang et al., 2002 - Google Patents

ZnSTeSe metal-semiconductor-metal photodetectors

Chang et al., 2002

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Document ID
3995597742891774120
Author
Chang S
Su Y
Chen W
Chen J
Lan W
Lin W
Cherng Y
Liu C
Liaw U
Publication year
Publication venue
IEEE Photonics Technology Letters

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Snippet

High-quality quaternary ZnSTeSe epitaxial layers were successfully grown by molecular beam epitaxy (MBE). It was found that a ZnS/sub 0.18/Se/sub 0.82/layer was automatically formed in between the ZnSe buffer layer, and the ZnS/sub 0.17/Te/sub 0.08/Se/sub …
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