Parveen et al., 2022 - Google Patents
Analog Memristor of Lead‐Free Cs4CuSb2Cl12 Layered Double Perovskite Nanocrystals as Solid‐State Electronic Synapse for Neuromorphic ComputingParveen et al., 2022
- Document ID
- 3909135966704093373
- Author
- Parveen S
- Manamel L
- Mukherjee A
- Sagar S
- Das B
- Publication year
- Publication venue
- Advanced Materials Interfaces
External Links
Snippet
Brain‐inspired artificial neural networks and neuromorphic computing are taking space to a new height based on solid‐state memristor devices. Despite considerable progress already made, the use of lead‐free double perovskite materials with direct bandgap can be …
- 239000002159 nanocrystal 0 title abstract description 38
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Yang et al. | A synaptic transistor based on quasi‐2D molybdenum oxide | |
| Balke et al. | Locally controlled Cu-ion transport in layered ferroelectric CuInP2S6 | |
| Parveen et al. | Analog Memristor of Lead‐Free Cs4CuSb2Cl12 Layered Double Perovskite Nanocrystals as Solid‐State Electronic Synapse for Neuromorphic Computing | |
| Goswami et al. | Charge disproportionate molecular redox for discrete memristive and memcapacitive switching | |
| Kim et al. | Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109 | |
| Kim et al. | Vertically aligned two-dimensional halide perovskites for reliably operable artificial synapses | |
| Li et al. | Origins and mechanisms of hysteresis in organometal halide perovskites | |
| Das et al. | Induced Vacancy-Assisted Filamentary Resistive Switching Device Based on RbPbI3–x Cl x Perovskite for RRAM Application | |
| Preziosi et al. | Direct mapping of phase separation across the metal–insulator transition of NdNiO3 | |
| Sun et al. | High on–off ratio improvement of ZnO-based forming-free memristor by surface hydrogen annealing | |
| Ku et al. | Two-terminal artificial synapse with hybrid organic–inorganic perovskite (CH3NH3) PbI3 and low operating power energy (∼ 47 fJ/μm2) | |
| Mohanty et al. | Phase Diagram and Dielectric Properties of MA1–x FA x PbI3 | |
| Rajasekaran et al. | Fast, Highly Flexible, and Transparent TaO x-Based Environmentally Robust Memristors for Wearable and Aerospace Applications | |
| Kostis et al. | Effect of the oxygen sub-stoichiometry and of hydrogen insertion on the formation of intermediate bands within the gap of disordered molybdenum oxide films | |
| Bala et al. | In situ synthesis of two-dimensional lateral semiconducting-Mo: Se//metallic-Mo junctions using controlled diffusion of se for high-performance large-scaled memristor | |
| Sun et al. | Highly sensitive terahertz thin-film total internal reflection spectroscopy reveals in situ photoinduced structural changes in methylammonium lead halide perovskites | |
| Das et al. | Resistive switching in a MoSe2-based memory device investigated using conductance noise spectroscopy | |
| Hsu et al. | Enhancement of Resistive Switching Characteristics of Sol–Gel TiO x RRAM Using Ag Conductive Bridges | |
| Katkar et al. | Binder-free synthesis of nanostructured amorphous cobalt phosphate for resistive memory and artificial synaptic device applications | |
| Hu et al. | Self-organization of ions at the interface between graphene and ionic liquid DEME-TFSI | |
| Guo et al. | Exploiting Flexible Memristors Based on Solution‐Processed Colloidal CuInSe2 Nanocrystals | |
| Gogoi et al. | Performance enhancement of solution-processed organic memories by exploiting synergistic organic–inorganic hybrid composites | |
| He et al. | Electrodeposition and characterization of CuTe and Cu2Te thin films | |
| Gao et al. | Unveiling strong ion–electron–lattice coupling and electronic antidoping in hydrogenated perovskite nickelate | |
| Kawauchi et al. | Electrically stimulated synaptic resistive switch in solution-processed silicon nanocrystal thin film: formation mechanism of oxygen vacancy filament for synaptic function |