[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Wang et al., 2001 - Google Patents

A V-band MMIC SPDT passive HEMT switch using impedance transformation networks

Wang et al., 2001

View PDF
Document ID
3860681079156094357
Author
Wang Y
Lin K
Niu D
Wang H
Publication year
Publication venue
2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No. 01CH37157)

External Links

Snippet

A V-Band MMIC single pole double throw (SPDT) switch using GaAs PHEMT process is designed, fabricated and tested. In contrast to the conventional resonant-type switch design method, this passive FET switch circuit utilizes impedance transformation to compensate the …
Continue reading at www.academia.edu (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used using semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used using semiconductor devices using field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/32—Non-reciprocal transmission devices
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D9/00—Demodulation or transference of modulation of modulated electromagnetic waves
    • H03D9/06—Transference of modulation using distributed inductance and capacitance
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1408—Balanced arrangements with diodes
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2176—Class E amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605—Distributed amplifiers
    • H03F3/607—Distributed amplifiers using FET's
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6683—High-frequency adaptations for monolithic microwave integrated circuit [MMIC]

Similar Documents

Publication Publication Date Title
Chao et al. A 50 to 94-GHz CMOS SPDT switch using traveling-wave concept
US7411471B2 (en) High-frequency switch
Bahl Control components using Si, GaAs, and GaN technologies
Nguyen et al. A K-band high power and high isolation stacked-FET single pole double throw MMIC switch using resonating capacitor
Cheon et al. A new wideband, low insertion loss, high linearity SiGe RF switch
Yang et al. High-linearity K-band absorptive-type MMIC switch using GaN PIN-diodes
Kim et al. A high-performance 40-85 GHz MMIC SPDT switch using FET-integrated transmission line structure
Mizutani et al. Compact DC-60-GHz HJFET MMIC switches using ohmic electrode-sharing technology
Lin et al. Millimeter-wave MMIC single-pole-double-throw passive HEMT switches using impedance-transformation networks
Thome et al. Millimeter-wave single-pole double-throw switches based on a 100-nm gate-length AlGaN/GaN-HEMT technology
Zhu et al. Miniaturized, ultra-wideband and high isolation single pole double throw switch by using π-type topology in GaAs pHEMT technology
Zheng et al. Ka-band high power GaN SPDT switch MMIC
Thome et al. W-band SPDT switches in planar and tri-gate 100-nm gate-length GaN-HEMT technology
Lai et al. A 60–110 GHz transmission-line integrated SPDT switch in 90 nm CMOS technology
Gong et al. A compact, high-power, 60 GHz SPDT switch using shunt-series SiGe PIN diodes
Wang et al. A V-band MMIC SPDT passive HEMT switch using impedance transformation networks
Bettidi et al. High power GaN-HEMT microwave switches for X-band and wideband applications
Alleva et al. High power microstrip GaN-HEMT switches for microwave applications
Tsai et al. DC-to-135 GHz and 15-to-135 GHz SPDT traveling wave switches using FET-integrated CPW line structure
Wang et al. Design of Low Loss Ka-Band SPDT Switch Based on AlGaN/GaN HEMT Technology
Hangai et al. An S-band 100W GaN protection switch
Wang et al. Using Impedance Transformation Networks
Chien et al. Low Insertion Loss, Reflective-Load Switches Operating in D-Band and G-Band
Li et al. A 25-to-40 GHz Asymmetric Single-Pole Double-Throw Switch Using Triple-Well CMOS Device
Tsai et al. A 24–48 GHz cascode HEMT mixer with DC to 15 GHz IF bandwidth for astronomy radio telescope