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Jung et al., 2024 - Google Patents

Reliability of Indium Solder Joints using a Laser-Assisted Bonding (LAB) Process at Room Temperature

Jung et al., 2024

Document ID
3771927477064209664
Author
Jung J
Eom Y
Joo J
Choi G
Shin J
Lee C
Jang K
Oh J
Lee G
Choi K
Lee S
Publication year
Publication venue
2024 IEEE 74th Electronic Components and Technology Conference (ECTC)

External Links

Snippet

This study introduces a Room-Temperature Laser-Assisted Bonding (LAB) process using indium solder and a proprietary laser Non-Conductive Paste (NCP) for eco-friendly, low- temperature electronic component bonding. Indium solder's low melting point and high …
Continue reading at ieeexplore.ieee.org (other versions)

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    • HELECTRICITY
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    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
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    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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