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Nguyen et al., 2013 - Google Patents

Edge termination design improvements for 10 kV 4H-SiC bipolar diodes

Nguyen et al., 2013

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Document ID
3568300921948642072
Author
Nguyen D
Huang R
Phung L
Planson D
Berthou M
Godignon P
Vergne B
Brosselard P
Publication year
Publication venue
Materials Science Forum

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Snippet

10 kV class 4H-SiC bipolar diodes have been fabricated. Two different edge terminations (Mesa/JTE or MESA/JTE with JTE rings) with two different junction bend radius have been designed and tested. Measurement results show that the inclusion of JTE rings improve the …
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