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Wang et al., 2011 - Google Patents

Iridium Nanocrystal Thin-Film Transistor Nonvolatile Memory with Si3N4/SiO2 Stack of Asymmetric Tunnel Barrier

Wang et al., 2011

Document ID
3567728500763745804
Author
Wang T
Lu T
Wu C
Liu Y
Hung S
Hsieh J
Kuo C
Publication year
Publication venue
Japanese journal of applied physics

External Links

Snippet

Abstract Iridium nanocrystals (Ir-NCs) lying on the Si 3 N 4/SiO 2 tunneling layer have been demonstrated and Ir-NC-assisted thin-film transistor nonvolatile memory devices were successfully developed. Results show that Ir-NCs with a number density of∼ 6× 10 11 cm-2 …
Continue reading at iopscience.iop.org (other versions)

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