[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Lokhandwala et al., 2020 - Google Patents

A high-power 24–40-GHz transmit–receive front end for phased arrays in 45-nm CMOS SOI

Lokhandwala et al., 2020

View PDF
Document ID
3519004812670248142
Author
Lokhandwala M
Gao L
Rebeiz G
Publication year
Publication venue
IEEE Transactions on Microwave Theory and Techniques

External Links

Snippet

This article presents a dual-band millimeter-wave front end in 45-nm CMOS silicon-on- insulator (SOI) for 5G applications. The front end is composed of a low-noise amplifier (LNA), power amplifier (PA), and a single-pole double throw (SPDT) switch. A double-tuned PA is …
Continue reading at www.academia.edu (PDF) (other versions)

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217Class D power amplifiers; Switching amplifiers
    • H03F3/2176Class E amplifiers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40Circuits
    • H04B1/44Transmit/receive switching
    • H04B1/48Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/387A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56Modifications of input or output impedances, not otherwise provided for
    • H03F1/565Modifications of input or output impedances, not otherwise provided for using inductive elements
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/10Auxiliary devices for switching or interrupting
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00Networks using active elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01QAERIALS
    • H01Q23/00Aerials with active circuits or circuit elements integrated within them or attached to them
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7236Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01QAERIALS
    • H01Q1/00Details of, or arrangements associated with, aerials
    • H01Q1/12Supports; Mounting means
    • H01Q1/22Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/24Supports; Mounting means by structural association with other equipment or articles with receiving set
    • H01Q1/241Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0053Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band

Similar Documents

Publication Publication Date Title
Lokhandwala et al. A high-power 24–40-GHz transmit–receive front end for phased arrays in 45-nm CMOS SOI
Kodak et al. A 5G 28-GHz common-leg T/R front-end in 45-nm CMOS SOI with 3.7-dB NF and− 30-dBc EVM with 64-QAM/500-MBaud modulation
Yi et al. A 24–29.5-GHz highly linear phased-array transceiver front-end in 65-nm CMOS supporting 800-MHz 64-QAM and 400-MHz 256-QAM for 5G new radio
Li et al. An eight-element 140-GHz wafer-scale IF beamforming phased-array receiver with 64-QAM operation in CMOS RFSOI
CN111052603B (en) Configurable power combiner and splitter
Golcuk et al. A 90-100-GHz 4 x 4 SiGe BiCMOS polarimetric transmit/receive phased array with simultaneous receive-beams capabilities
Abdelhalem et al. Hybrid transformer-based tunable differential duplexer in a 90-nm CMOS process
Li et al. High efficiency D-band multiway power combined amplifiers with 17.5–19-dBm psat and 14.2–12.1% peak PAE in 45-nm CMOS RFSOI
Ku et al. A wideband transformer-coupled CMOS power amplifier for $ X $-band multifunction chips
Elkholy et al. Low-loss highly linear integrated passive phase shifters for 5G front ends on bulk CMOS
Liu et al. A Fully Integrated X-Band Phased-Array Transceiver in 0.13-$\mu {\hbox {m}} $ SiGe BiCMOS Technology
Gharibdoust et al. A Fully Integrated 0.18-$\mu {\hbox {m}} $ CMOS Transceiver Chip for $ X $-Band Phased-Array Systems
Liu et al. A Ka-band single-chip SiGe BiCMOS phased-array transmit/receive front-end
Li et al. A 24–30-GHz TRX front-end with high linearity and load-variation insensitivity for mm-wave 5G in 0.13-μm SiGe BiCMOS
Sayginer et al. A W-band LNA/phase shifter with 5-dB NF and 24-mW power consumption in 32-nm CMOS SOI
Tang et al. Design and analysis of a 140-GHz T/R front-end module in 22-nm FD-SOI CMOS
Lee et al. Millimeter-wave frequency reconfigurable dual-band CMOS power amplifier for 5G communication radios
Lee et al. Ka-band inductor-shared SP ${n} $ T DP ${n} $ T switches and their applications to TTD phase shifter
Rostomyan et al. Synthesis technique for low-loss mm-wave T/R combiners for TDD front-ends
Kuo et al. A high-isolation 60GHz CMOS transmit/receive switch
Kijsanayotin et al. Millimeter-wave dual-band, bidirectional amplifier and active circulator in a CMOS SOI process
Zhu et al. A 10.56-GHz broadband transceiver with integrated T/R switching via matching network reuse and 0.3–2.1-GHz baseband in 28-nm CMOS technology
Kim et al. Analysis and design of multi-stacked FET power amplifier with phase-compensation inductors in Millimeter-wave band
Kim et al. A broadband D-band dual-peak Gmax-core amplifier with a T-shaped embedding network in CMOS
Eltaliawy et al. A broadband, mm-wave SPST switch with minimum 50-dB isolation in 45-nm SOI-CMOS