Devine et al., 1990 - Google Patents
Defect pair creation through ultraviolet radiation in dense, amorphous SiO 2Devine et al., 1990
- Document ID
- 3502520064572227626
- Author
- Devine R
- Arndt J
- Publication year
- Publication venue
- Physical Review B
External Links
Snippet
Defect creation in 24% densified, high-OH-concentration amorphous SiO 2 has been studied using 248-nm excimer laser radiation. Combining laser and γ-ray radiation data, we find correlated growth of oxygen-vacancy and nonbridging oxygen-hole-center defects over …
- 229910021486 amorphous silicon dioxide 0 title abstract 2
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