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Antonova et al., 1999 - Google Patents

Thermal donor and oxygen precipitate formation in silicon during 450° C treatments under atmospheric and enhanced pressure

Antonova et al., 1999

Document ID
3417059915921486826
Author
Antonova I
Popov V
Plotnikov A
Misiuk A
Publication year
Publication venue
Journal of the Electrochemical Society

External Links

Snippet

Transformation of the state of oxygen in Czochralski-grown silicon, CZ-Si, occurs at temperatures (350C) when oxygen atoms become mobile. CZ-Si samples annealed at the 400-500C temperature range indicate the following peculiarity: two processes connected …
Continue reading at iopscience.iop.org (other versions)

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