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Tian et al., 2012 - Google Patents

In-doped Ga 2 O 3 nanobelt based photodetector with high sensitivity and wide-range photoresponse

Tian et al., 2012

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Document ID
3391565490328092280
Author
Tian W
Zhi C
Zhai T
Chen S
Wang X
Liao M
Golberg D
Bando Y
Publication year
Publication venue
Journal of Materials Chemistry

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Snippet

Doping is an efficient way to tune the electrical and photoelectrical performances of one- dimensional semiconductors which have potential application as active materials in high performance nanoscale devices. Ga2O3 is one the most promising 1D semiconducting …
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    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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