[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Lv et al., 2021 - Google Patents

A fully integrated 3.5-/4.9-GHz dual-band GaN MMIC Doherty power amplifier based on multi-resonant circuits

Lv et al., 2021

Document ID
3124486653311824303
Author
Lv G
Chen W
Chen X
Wan S
Ghannouchi F
Feng Z
Publication year
Publication venue
IEEE Transactions on Microwave Theory and Techniques

External Links

Snippet

In this article, a fully integrated dual-band gallium nitride (GaN) Doherty power amplifier (DPA) based on multi-resonant circuits (MRCs) is presented. A lumped T-type network in combination with the output capacitances of the main and auxiliary transistors is able to …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217Class D power amplifiers; Switching amplifiers
    • H03F3/2176Class E amplifiers
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0294Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using vector summing of two or more constant amplitude phase-modulated signals
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602Combinations of several amplifiers
    • H03F3/604Combinations of several amplifiers using FET's
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H03F1/3252Modifications of amplifiers to reduce non-linear distortion using predistortion circuits using multiple parallel paths between input and output
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56Modifications of input or output impedances, not otherwise provided for
    • H03F1/565Modifications of input or output impedances, not otherwise provided for using inductive elements
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605Distributed amplifiers
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/387A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/451Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02Transmitters
    • H04B1/04Circuits

Similar Documents

Publication Publication Date Title
Pang et al. Broadband RF-input continuous-mode load-modulated balanced power amplifier with input phase adjustment
Cao et al. Continuous-mode hybrid asymmetrical load-modulated balanced amplifier with three-way modulation and multi-band reconfigurability
Chen et al. A broadband Doherty power amplifier based on continuous-mode technology
Li et al. Ultra-wideband dual-mode Doherty power amplifier using reciprocal gate bias for 5G applications
Grebennikov et al. A dual-band parallel Doherty power amplifier for wireless applications
Lv et al. A compact Ka/Q dual-band GaAs MMIC Doherty power amplifier with simplified offset lines for 5G applications
Nikandish et al. Bandwidth enhancement of GaN MMIC Doherty power amplifiers using broadband transformer-based load modulation network
Liu et al. Novel dual-band equal-cell Doherty amplifier design with extended power back-off range
Pang et al. Multiband dual-mode Doherty power amplifier employing phase periodic matching network and reciprocal gate bias for 5G applications
Fang et al. Modified Doherty amplifier with extended bandwidth and back-off power range using optimized peak combining current ratio
Jee et al. Asymmetric broadband Doherty power amplifier using GaN MMIC for femto-cell base-station
Zhou et al. A Doherty power amplifier with extended high-efficiency range using three-port harmonic injection network
Lv et al. A fully integrated 47.6% fractional bandwidth GaN MMIC distributed efficient power amplifier with modified input matching and power splitting network
Piacibello et al. 3-way Doherty power amplifiers: Design guidelines and MMIC implementation at 28 GHz
Jia et al. A 1.8–3.4-GHz bandwidth-improved reconfigurable mode Doherty power amplifier utilizing switches
Xia et al. 60-GHz power amplifier in 45-nm SOI-CMOS using stacked transformer-based parallel power combiner
Lv et al. A fully integrated 3.5-/4.9-GHz dual-band GaN MMIC Doherty power amplifier based on multi-resonant circuits
Enomoto et al. Second harmonic treatment technique for bandwidth enhancement of GaN HEMT amplifier with harmonic reactive terminations
Lv et al. A highly linear GaN MMIC Doherty power amplifier based on phase mismatch induced AM–PM compensation
Jundi et al. An 85-W multi-octave push–pull GaN HEMT power amplifier for high-efficiency communication applications at microwave frequencies
Zhou et al. Broadband Doherty power amplifier based on coupled phase compensation network
CN106664062B (en) Integrated 3-way Doherty amplifier
Abounemra et al. Systematic design methodology of broadband Doherty amplifier using unified matching/combining networks with an application to GaN MMIC design
Zhao et al. Analysis and design of CMOS Doherty power amplifier based on voltage combining method
Zhou et al. Broadband highly efficient Doherty power amplifiers