Li et al., 2014 - Google Patents
Fabrication of p-type porous silicon nanowire with oxidized silicon substrate through one-step MACELi et al., 2014
View HTML- Document ID
- 2977164730221626753
- Author
- Li S
- Ma W
- Zhou Y
- Chen X
- Xiao Y
- Ma M
- Wei F
- Yang X
- Publication year
- Publication venue
- Journal of Solid State Chemistry
External Links
Snippet
In this paper, the simple pre-oxidization process is firstly used to treat the starting silicon wafer, and then MPSiNWs are successfully fabricated from the moderately doped wafer by one-step MACE technology in HF/AgNO 3 system. The PL spectrum of MPSiNWs obtained …
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon 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 [Si] 0 title abstract description 61
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/54—Material technologies
- Y02E10/549—Material technologies organic PV cells
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
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