[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Law et al., 2008 - Google Patents

Improving the NH3 gas sensitivity of ZnO nanowire sensors by reducing the carrier concentration

Law et al., 2008

View PDF
Document ID
2915995650440708381
Author
Law J
Thong J
Publication year
Publication venue
Nanotechnology

External Links

Snippet

We report a method to improve the sensitivity of a zinc oxide (ZnO) nanowire gas sensor towards ammonia (NH 3) without the use of catalyst nanoparticles on the nanowire surface. This improvement is achieved by lowering the nominal carrier concentration in the as-grown …
Continue reading at www.ece.nus.edu.sg (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the impedance of the material
    • G01N27/04—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the impedance of the material by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the impedance of the material by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by the preceding groups
    • G01N33/0004—Gaseous mixtures, e.g. polluted air
    • G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
    • G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
    • G01N33/0036—Specially adapted to detect a particular component
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Similar Documents

Publication Publication Date Title
Law et al. Improving the NH3 gas sensitivity of ZnO nanowire sensors by reducing the carrier concentration
Baek et al. A highly sensitive chemical gas detecting transistor based on highly crystalline CVD-grown MoSe 2 films
Zhou et al. Crystal-defect-dependent gas-sensing mechanism of the single ZnO nanowire sensors
Van Hieu Comparative study of gas sensor performance of SnO2 nanowires and their hierarchical nanostructures
Navale et al. Rapid synthesis strategy of CuO nanocubes for sensitive and selective detection of NO2
Aluri et al. Highly selective GaN-nanowire/TiO2-nanocluster hybrid sensors for detection of benzene and related environment pollutants
Kim et al. Fabrication of ZnO/CdS, ZnO/CdO core/shell nanorod arrays and investigation of their ethanol gas sensing properties
Huang et al. High sensitivity SnO2 single-nanorod sensors for the detection of H2 gas at low temperature
EP2623968B1 (en) Gas sensor comprising a gate structure with capacitively coupled platinum crystal grains
Drmosh et al. Hydrogen sensing properties of sputtered ZnO films decorated with Pt nanoparticles
Ghaddab et al. Detection of O3 and NH3 using hybrid tin dioxide/carbon nanotubes sensors: Influence of materials and processing on sensor's sensitivity
KR101364138B1 (en) ZnSnO3 nanorods coated with palladium particles, a preparation method thereof, and gas sensor using the same
Huh et al. Highly sensitive hydrogen detection of catalyst-free ZnO nanorod networks suspended by lithography-assisted growth
Alwan et al. Study the characteristic of planer and sandwich PSi gas sensor (comparative study)
US11029271B2 (en) Ammonia gas detecting sensor using graphene doped with copper oxide nanopaticles and ammonia gas detecting device comprising the same
Lin et al. Carbon nanotubes with adsorbed Au for sensing gas
Jayatissa et al. Methane gas sensor application of cuprous oxide synthesized by thermal oxidation
Schlecht et al. Electrochemically decorated carbon nanotubes for hydrogen sensing
Jha et al. CVD grown cuprous oxide thin film based high performance chemiresistive ammonia gas sensors
Kim et al. Enhanced NO2 sensing characteristics of Pd-functionalized networked In2O3 nanowires
KR101889175B1 (en) ZnO nanowire gas sensor functionalized with Au, Pt and Pd nanoparticle using room temperature sensing properties and method of manufacturing the same
Ahmad et al. Investigation of RF sputtered tungsten trioxide nanorod thin film gas sensors prepared with a glancing angle deposition method toward reductive and oxidative analytes
Rajan et al. An investigation on electrical and hydrogen sensing characteristics of RF sputtered ZnO thin-film with palladium Schottky contacts
Yakovlev et al. Low-resistivity gas sensors based on the In2O3-Ga2O3 mixed compounds films
KR20120100536A (en) Gas sensor having ag-doped zno nanowire and method of manufacturing the same