[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Biber et al., 1998 - Google Patents

A nonlinear microwave MOSFET model for SPICE simulators

Biber et al., 1998

Document ID
2863632987835559390
Author
Biber C
Schmatz M
Morf T
Lott U
Bachtold W
Publication year
Publication venue
IEEE transactions on microwave theory and techniques

External Links

Snippet

As the gate lengths of silicon MOSFET's become smaller and smaller, these devices are usable to frequencies in the gigahertz range. The nonlinear MOSFET model presented in this paper is based on S-parameter measurements over a large bias range, and has been …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING; COUNTING
    • G06F—ELECTRICAL DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/50—Computer-aided design
    • G06F17/5009—Computer-aided design using simulation
    • G06F17/5036—Computer-aided design using simulation for analog modelling, e.g. for circuits, spice programme, direct methods, relaxation methods
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—Dc amplifiers in which all stages are dc-coupled
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605—Distributed amplifiers
    • H03F3/607—Distributed amplifiers using FET's

Similar Documents

Publication Publication Date Title
Kwon et al. A simple and analytical parameter-extraction method of a microwave MOSFET
Enz et al. MOS transistor modeling for RF IC design
Enz An MOS transistor model for RF IC design valid in all regions of operation
Curtice GaAs MESFET modeling and nonlinear CAD
Kang et al. Linearity analysis of CMOS for RF application
Jen et al. Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz
Materka et al. Computer calculation of large-signal GaAs FET amplifier characteristics
Chen et al. High frequency noise of MOSFETs I Modeling
Niu et al. RF linearity characteristics of SiGe HBTs
Cheng et al. High-frequency small signal AC and noise modeling of MOSFETs for RF IC design
Biber et al. A nonlinear microwave MOSFET model for SPICE simulators
Chalkiadaki et al. RF small-signal and noise modeling including parameter extraction of nanoscale MOSFET from weak to strong inversion
Lee et al. Direct parameter extraction of SiGe HBTs for the VBIC bipolar compact model
Long et al. A novel 4-D artificial-neural-network-based hybrid large-signal model of GaAs pHEMTs
Jansen et al. Consistent small-signal and large-signal extraction techniques for heterojunction FET's
Ho et al. A physical large signal Si MOSFET model for RF circuit design
Martinez et al. Assessment and Comparison of Measurement-Based Large-Signal FET Models for GaN HEMTs
Koh et al. A spline large-signal FET model based on bias-dependent pulsed IV measurement
Je et al. A simple four-terminal small-signal model of RF MOSFETs and its parameter extraction
Cheng et al. RF modeling issues of deep-submicron MOSFETs for circuit design
Siligaris et al. A new empirical nonlinear model for sub-250 nm channel MOSFET
Vandamme et al. Development of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIM3v3 compact model
Grebennikov et al. An efficient CAD-oriented large-signal MOSFET model
Xia et al. Frequency and bias-dependent modeling of correlated base and collector current RF noise in SiGe HBTs using quasi-static equivalent circuit
Alam et al. Extrinsic parameter extraction and RF modelling of CMOS