Zhang et al., 2018 - Google Patents
A novel high linearity and low power folded CMOS LNA for UWB receiversZhang et al., 2018
View PDF- Document ID
- 2849863912614325511
- Author
- Zhang X
- Wang C
- Sun Y
- Peng H
- Publication year
- Publication venue
- Journal of Circuits, Systems and Computers
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Snippet
This paper presents a high linearity and low power Low-Noise Amplifier (LNA) for Ultra- Wideband (UWB) receivers based on CHRT 0.18 μ m Complementary Metal-Oxide- Semiconductor (CMOS) technology. In this work, the folded topology is adopted in order to …
- 238000000034 method 0 abstract description 31
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- H—ELECTRICITY
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- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
- H03F3/45188—Non-folded cascode stages
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- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45197—Pl types
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
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- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
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- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
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- H03F2203/45296—Indexing scheme relating to differential amplifiers the AAC comprising one or more discrete capacitive elements, e.g. a transistor coupled as capacitor
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
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- H—ELECTRICITY
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- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
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- H03F2203/45704—Indexing scheme relating to differential amplifiers the LC comprising one or more parallel resonance circuits
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- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
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- H03F2200/372—Noise reduction and elimination in amplifier
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- H03F2200/492—A coil being added in the source circuit of a transistor amplifier stage as degenerating element
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- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
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