Yakata et al., 2009 - Google Patents
Influence of perpendicular magnetic anisotropy on spin-transfer switching current in CoFeB∕ MgO∕ CoFeB magnetic tunnel junctionsYakata et al., 2009
- Document ID
- 2828132872287274753
- Author
- Yakata S
- Kubota H
- Suzuki Y
- Yakushiji K
- Fukushima A
- Yuasa S
- Ando K
- Publication year
- Publication venue
- Journal of Applied Physics
External Links
Snippet
We investigated the spin-torque diode effect in submicron-scale Co 60 Fe 20 B 20∕ Mg O∕(Co x Fe 1− x) 80 B 20 (0⩽ x⩽ 0.9) magnetic tunnel junctions (MTJs) under perpendicular magnetic fields H ext up to 10 kOe. A single peak was clearly observed in …
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L43/08—Magnetic-field-controlled resistors
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