[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Lodahl et al., 2022 - Google Patents

A deterministic source of single photons

Lodahl et al., 2022

View HTML
Document ID
2808694870887944790
Author
Lodahl P
Ludwig A
Warburton R
Publication year
Publication venue
Physics Today

External Links

Snippet

Photons are the quantum constituents of light and are fundamental to the quantum theory of light and to the light–matter interaction. The quantum information stored in photonic qubits can be sent over large distances using photons at optical frequencies. But photons are …
Continue reading at pubs.aip.org (HTML) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers)
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers)
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting lasers (SE-lasers)
    • H01S5/183—Surface-emitting lasers (SE-lasers) having a vertical cavity (VCSE-lasers)
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y20/00—Nano-optics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y10/00—Nano-technology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Similar Documents

Publication Publication Date Title
Lodahl et al. A deterministic source of single photons
da Silva et al. GaAs quantum dots grown by droplet etching epitaxy as quantum light sources
Mäntynen et al. Single-photon sources with quantum dots in III–V nanowires
Heindel et al. Quantum dots for photonic quantum information technology
Fox et al. Quantum wells, superlattices, and band-gap engineering
Arakawa et al. Progress in quantum-dot single photon sources for quantum information technologies: A broad spectrum overview
Shields Semiconductor quantum light sources
Aharonovich et al. Solid-state single-photon emitters
Alfieri et al. Nanomaterials for quantum information science and engineering
Senellart et al. High-performance semiconductor quantum-dot single-photon sources
Khitrova et al. Vacuum Rabi splitting in semiconductors
US9397293B2 (en) Phoniton systems, devices, and methods
US8509276B2 (en) Plasmon lasers at deep subwavelength scale
Zhou et al. Epitaxial quantum dots: a semiconductor launchpad for photonic quantum technologies
Hou et al. Room temperature plasmonic lasing in a continuous wave operation mode from an InGaN/GaN single nanorod with a low threshold
US20080224121A1 (en) Spontaneous emission of telecommunication wavelength emitters coupled to at least one resonant cavity
US20090074355A1 (en) Photonically-coupled nanoparticle quantum systems and methods for fabricating the same
Reitzenstein Semiconductor quantum dot–microcavities for quantum optics in solid state
Shahzadeh et al. The effects of wetting layer on electronic and optical properties of intersubband P-to-S transitions in strained dome-shaped InAs/GaAs quantum dots
Xia et al. Enhanced single-photon emission from GaN quantum dots in bullseye structures
JP5575253B2 (en) Tunable quantum light source
Chen et al. Integrated Quantum Nanophotonics with Solution‐Processed Materials
Peter et al. High-Q whispering-gallery modes in GaAs∕ AlOx microdisks
Kuramochi et al. Ultralow bias power all-optical photonic crystal memory realized with systematically tuned L3 nanocavity
Chattaraj et al. On-chip integrated single photon source-optically resonant metastructure based scalable quantum optical circuits