Sagade et al., 2013 - Google Patents
High-mobility field effect transistors based on supramolecular charge transfer nanofibresSagade et al., 2013
View PDF- Document ID
- 2789107878196647758
- Author
- Sagade A
- Rao K
- Mogera U
- George S
- Datta A
- Kulkarni G
- Publication year
- Publication venue
- Adv. Mater
External Links
Snippet
Since the first report on organic thin field effect transistor (OFET) in 1987,[1] there has been intense effort to improve the transistor performance in relation to the inorganic counterparts, using single molecules,[2, 3] self-assembled monolayers,[4] nanowires or belts [5] as well as …
- 230000005669 field effect 0 title abstract description 9
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/05—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
- H01L51/0504—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
- H01L51/0508—Field-effect devices, e.g. TFTs
- H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
- H01L51/0545—Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
- H01L51/005—Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene
- H01L51/0052—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
- H01L51/0045—Carbon containing materials, e.g. carbon nanotubes, fullerenes
- H01L51/0048—Carbon nanotubes
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
- H01L51/005—Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene
- H01L51/0062—Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene aromatic compounds comprising a hetero atom, e.g.: N,P,S
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/05—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
- H01L51/0575—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L51/0595—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices molecular electronic devices
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
- H01L51/0034—Organic polymers or oligomers
- H01L51/0035—Organic polymers or oligomers comprising aromatic, heteroaromatic, or arrylic chains, e.g. polyaniline, polyphenylene, polyphenylene vinylene
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/42—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/0001—Processes specially adapted for the manufacture or treatment of devices or of parts thereof
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Sagade et al. | High-mobility field effect transistors based on supramolecular charge transfer nanofibres | |
Cho et al. | Recent advances in interface engineering of transition-metal dichalcogenides with organic molecules and polymers | |
Ren et al. | Recent advances in ambipolar transistors for functional applications | |
Chen et al. | Interface engineering in organic field-effect transistors: principles, applications, and perspectives | |
Luo et al. | Doping engineering and functionalization of two-dimensional metal chalcogenides | |
Star et al. | Nanotube optoelectronic memory devices | |
Shih et al. | Nanostructured materials for non-volatile organic transistor memory applications | |
Halik et al. | Relationship between molecular structure and electrical performance of oligothiophene organic thin film transistors | |
Chabinyc et al. | Effects of molecular oxygen and ozone on polythiophene-based thin-film transistors | |
Burghard et al. | Carbon‐based field‐effect transistors for nanoelectronics | |
Ahn et al. | Electrostatic modification of novel materials | |
Xiao et al. | Sub-5 nm single crystalline organic p–n heterojunctions | |
Dai et al. | Multifunctionality of giant and long-lasting persistent photoconductivity: semiconductor–conductor transition in graphene nanosheets and amorphous InGaZnO hybrids | |
Han et al. | Energy-band engineering for tunable memory characteristics through controlled doping of reduced graphene oxide | |
Bhattacharjee et al. | Electrical reliability, multilevel data storage and mechanical stability of MoS2-PMMA nanocomposite-based non-volatile memory device | |
Chen et al. | Unique Role of Self‐Assembled Monolayers in Carbon Nanomaterial‐Based Field‐Effect Transistors | |
Liu et al. | Two-dimensional WSe2/organic acceptor hybrid nonvolatile memory devices based on interface charge trapping | |
Amsterdam et al. | Leveraging molecular properties to tailor mixed-dimensional heterostructures beyond energy level alignment | |
Choi et al. | Proton-conductor-gated MoS2 transistors with room temperature electron mobility of> 100 cm2 V–1 s–1 | |
Yakuphanoglu et al. | Effects of channel widths, thicknesses of active layer on the electrical and photosensing properties of the 6, 13-bis (triisopropylsilylethynyl) pentacene transistors by thermal evaporation method: comparison study | |
Chaudhary et al. | MoS2 assisted self-assembled poly (3-hexylthiophene) thin films at an air/liquid interface for high-performance field-effect transistors under ambient conditions | |
Xu et al. | Tunable two-dimensional interfacial coupling in molecular heterostructures | |
Kim et al. | Carrier transport mechanisms of multilevel nonvolatile memory devices with a floating gate consisting of hybrid organic/inorganic nanocomposites | |
Fan et al. | Controllable synthesis of flake-like Al-doped ZnO nanostructures and its application in inverted organic solar cells | |
Lee et al. | One-transistor–one-transistor (1T1T) optoelectronic nonvolatile MoS2 memory cell with nondestructive read-out |