[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Fresquet et al., 2015 - Google Patents

Metrology and Inspection

Fresquet et al., 2015

Document ID
2621025376523366408
Author
Fresquet G
Piel J
Perrot S
Takizawa H
Sato O
Gu A
Feser M
Johnson B
Estrada R
Tatsumoto Y
Publication year
Publication venue
Three-Dimensional Integration of Semiconductors: Processing, Materials, and Applications

External Links

Snippet

Spectroscopic reflectometry is a nondestructive technique widely used to analyze the properties of materials as thin layer thicknesses are used in advanced packaging manufacturing. The technique is based on the propagation of waves into media. If a …
Continue reading at link.springer.com (other versions)

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical means
    • G01B11/02Measuring arrangements characterised by the use of optical means for measuring length, width or thickness
    • G01B11/06Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material
    • G01B11/0616Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material of coating
    • G01B11/0675Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material of coating using interferometry
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302Contactless testing
    • G01R31/308Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons
    • G01N23/02Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by transmitting the radiation through the material
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical means
    • G01B11/24Measuring arrangements characterised by the use of optical means for measuring contours or curvatures
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00Instruments as specified in the subgroups and characterised by the use of optical measuring means
    • G01B9/02Interferometers for determining dimensional properties of, or relations between, measurement objects
    • G01B9/02001Interferometers for determining dimensional properties of, or relations between, measurement objects characterised by manipulating or generating specific radiation properties
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00Investigating or analysing materials by specific methods not covered by the preceding groups
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00Investigating materials by wave or particle radiation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process

Similar Documents

Publication Publication Date Title
US10935501B2 (en) Sub-resolution defect detection
US9587932B2 (en) System for directly measuring the depth of a high aspect ratio etched feature on a wafer
US9576862B2 (en) Optical acoustic substrate assessment system and method
US6753972B1 (en) Thin film thickness measuring method and apparatus, and method and apparatus for manufacturing a thin film device using the same
JP5989671B2 (en) Optical system and method for measuring three-dimensional structures
JP6277530B2 (en) Method and device for controllably revealing an object, eg a structure buried in a wafer
TWI710746B (en) Measurement method and system for small box size targets
US20150226539A1 (en) System and method for determining the position of defects on objects, coordinate measuring unit and computer program for coordinate measuring unit
KR20150024425A (en) Device-like scatterometry overlay targets
US20100321671A1 (en) System for directly measuring the depth of a high aspect ratio etched feature on a wafer
TW201710668A (en) Methods and apparatus for measuring height on a semiconductor wafer
JP2006170996A (en) Inspection device, sample, and inspection method
CN110326094B (en) Three-dimensional calibration structure and method for measuring buried defects on three-dimensional semiconductor wafers
KR20190062190A (en) Apparatus for inspecting substrate and method thereof
TWI441271B (en) System, method and computer readable medium for through silicon via structure measurement
Ahn et al. A hybrid non-destructive measuring method of three-dimensional profile of through silicon vias for realization of smart devices
KR102337617B1 (en) Characterizing tsv microfabrication process and products
CN109341519A (en) For determining the method and system of the parameter in the interest region in structure
CN105277131B (en) Measuring device and measuring method of three-dimensional pore structure
Fresquet et al. Metrology and Inspection
KR20220032922A (en) Apparatus and method for pupil ellipsometry, and method for fabricating semiconductor device using the method
CN220084691U (en) Optical measuring device
Tsuto et al. Advanced through-silicon via inspection for 3D integration
Wang et al. Hybrid Bright-Dark-Field Microscopic Fringe Projection System for Cu Pillar Height Measurement in Wafer-Level Package
Vartanian et al. Metrology Needs for 2.5 D/3D Interconnects