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Nakashima et al., 1991 - Google Patents

SIMOX wafers with low dislocation density produced by a 100-mA-class high-current oxygen implanter

Nakashima et al., 1991

Document ID
2543174592893812568
Author
Nakashima S
Izumi K
Publication year
Publication venue
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

External Links

Snippet

The dislocation density and the structure of SIMOX wafers formed under different implantation conditions have been investigated using Secco etching and cross-sectional transmission electron microscopy (XTEM). The relationship between the breakdown voltage …
Continue reading at www.sciencedirect.com (other versions)

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