Brueckner et al., 2008 - Google Patents
Two-dimensional electron gas based actuation of piezoelectric AlGaN/GaN microelectromechanical resonatorsBrueckner et al., 2008
- Document ID
- 2525871292751730402
- Author
- Brueckner K
- Niebelschuetz F
- Tonisch K
- Michael S
- Dadgar A
- Krost A
- Cimalla V
- Ambacher O
- Stephan R
- Hein M
- Publication year
- Publication venue
- Applied Physics Letters
External Links
Snippet
Free-standing piezoelectric AlGaN/GaN beam resonators have been prepared on silicon substrates. The two-dimensional electron gas at the interface of the III/V heterostructure has been employed to act as back electrode for the piezoelectric active layer. The fundamental …
- 229910002601 GaN 0 title abstract description 23
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L41/08—Piezo-electric or electrostrictive devices
- H01L41/09—Piezo-electric or electrostrictive devices with electrical input and mechanical output, e.g. actuators, vibrators
- H01L41/0926—Piezo-electric or electrostrictive devices with electrical input and mechanical output, e.g. actuators, vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H01L41/0933—Beam type
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of micro-electro-mechanical resonators
- H03H2009/02488—Vibration modes
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