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Brueckner et al., 2008 - Google Patents

Two-dimensional electron gas based actuation of piezoelectric AlGaN/GaN microelectromechanical resonators

Brueckner et al., 2008

Document ID
2525871292751730402
Author
Brueckner K
Niebelschuetz F
Tonisch K
Michael S
Dadgar A
Krost A
Cimalla V
Ambacher O
Stephan R
Hein M
Publication year
Publication venue
Applied Physics Letters

External Links

Snippet

Free-standing piezoelectric AlGaN/GaN beam resonators have been prepared on silicon substrates. The two-dimensional electron gas at the interface of the III/V heterostructure has been employed to act as back electrode for the piezoelectric active layer. The fundamental …
Continue reading at pubs.aip.org (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L41/00Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L41/08Piezo-electric or electrostrictive devices
    • H01L41/09Piezo-electric or electrostrictive devices with electrical input and mechanical output, e.g. actuators, vibrators
    • H01L41/0926Piezo-electric or electrostrictive devices with electrical input and mechanical output, e.g. actuators, vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02244Details of micro-electro-mechanical resonators
    • H03H2009/02488Vibration modes
    • H03H2009/02496Horizontal, i.e. parallel to the substrate plane

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