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Wang et al., 2014 - Google Patents

Compact modelling of ferroelectric tunnel memristor and its use for neuromorphic simulation

Wang et al., 2014

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Document ID
2273506871799659914
Author
Wang Z
Zhao W
Kang W
Zhang Y
Klein J
Ravelosona D
Chappert C
Publication year
Publication venue
Applied Physics Letters

External Links

Snippet

Ferroelectric tunnel memristor (FTM) was recently discovered. Its resistance can be continuously tuned by controlling the growth of domain in ferroelectric tunnel barrier. Experiments show its large OFF/ON resistance ratio (> 10 2) and high operation speed (∼ …
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00 using resistance random access memory [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING; COUNTING
    • G06F—ELECTRICAL DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/30—Information retrieval; Database structures therefor; File system structures therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00 using optical elements using other beam accessed elements, e.g. electron, ion beam
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor

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