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Das et al., 2021 - Google Patents

Doping-free all PtSe2 transistor via thickness-modulated phase transition

Das et al., 2021

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Document ID
2082623710947218921
Author
Das T
Yang E
Seo J
Kim J
Park E
Kim M
Seo D
Kwak J
Chang J
Publication year
Publication venue
ACS Applied Materials & Interfaces

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Snippet

Achieving a high-quality metal contact on two-dimensional (2D) semiconductors still remains a major challenge due to the strong Fermi level pinning and the absence of an effective doping method. Here, we demonstrate high performance “all-PtSe2” field-effect transistors …
Continue reading at www.researchgate.net (PDF) (other versions)

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