Joo et al., 2021 - Google Patents
1D photonic crystal direct bandgap GeSn-on-insulator laserJoo et al., 2021
View PDF- Document ID
- 2052523687698507373
- Author
- Joo H
- Kim Y
- Burt D
- Jung Y
- Zhang L
- Chen M
- Parluhutan S
- Kang D
- Lee C
- Assali S
- Ikonic Z
- Moutanabbir O
- Cho Y
- Tan C
- Nam D
- Publication year
- Publication venue
- Applied Physics Letters
External Links
Snippet
GeSn alloys have been regarded as a potential lasing material for a complementary metal– oxide–semiconductor-compatible light source. Despite their remarkable progress, all GeSn lasers reported to date have large device footprints and active areas, which prevent the …
- 239000004038 photonic crystal 0 title abstract description 12
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
- G02B6/00—Light guides
- G02B6/10—Light guides of the optical waveguide type
- G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
- G02B6/122—Light guides of the optical waveguide type of the integrated circuit kind basic optical elements, e.g. light-guiding paths
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
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