Zhan et al., 2014 - Google Patents
Graphene field‐effect transistor and its application for electronic sensingZhan et al., 2014
- Document ID
- 205803817393587779
- Author
- Zhan B
- Li C
- Yang J
- Jenkins G
- Huang W
- Dong X
- Publication year
- Publication venue
- Small
External Links
Snippet
Graphene, because of its excellent mechanical, electrical, chemical, physical properties, sparked great interest to develop and extend its applications. Particularly, graphene based field‐effect transistors (GFETs) present exciting and bright prospects for sensing applications …
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon 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 [C] 0 title abstract description 340
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- H01L51/0504—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
- H01L51/0508—Field-effect devices, e.g. TFTs
- H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
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- H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
- H01L51/0045—Carbon containing materials, e.g. carbon nanotubes, fullerenes
- H01L51/0048—Carbon nanotubes
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- H01L51/005—Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene
- H01L51/0052—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
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- H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1606—Graphene
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- H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
- H01L29/66977—Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects
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