[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Zhan et al., 2014 - Google Patents

Graphene field‐effect transistor and its application for electronic sensing

Zhan et al., 2014

Document ID
205803817393587779
Author
Zhan B
Li C
Yang J
Jenkins G
Huang W
Dong X
Publication year
Publication venue
Small

External Links

Snippet

Graphene, because of its excellent mechanical, electrical, chemical, physical properties, sparked great interest to develop and extend its applications. Particularly, graphene based field‐effect transistors (GFETs) present exciting and bright prospects for sensing applications …
Continue reading at onlinelibrary.wiley.com (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/05Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
    • H01L51/0504Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
    • H01L51/0508Field-effect devices, e.g. TFTs
    • H01L51/0512Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H01L51/0545Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/0045Carbon containing materials, e.g. carbon nanotubes, fullerenes
    • H01L51/0048Carbon nanotubes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANO-TECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y10/00Nano-technology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANO-TECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y30/00Nano-technology for materials or surface science, e.g. nano-composites
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/005Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene
    • H01L51/0052Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1606Graphene
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANO-TECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y40/00Manufacture or treatment of nano-structures
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/66977Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects

Similar Documents

Publication Publication Date Title
Zhan et al. Graphene field‐effect transistor and its application for electronic sensing
Chen et al. Environmental analysis with 2D transition-metal dichalcogenide-based field-effect transistors
Mao et al. Two-dimensional nanomaterial-based field-effect transistors for chemical and biological sensing
Yan et al. High-performance UV-assisted NO2 sensor based on chemical vapor deposition graphene at room temperature
Tran et al. Carbon nanotubes and graphene nano field-effect transistor-based biosensors
Yang et al. Two-dimensional layered nanomaterials for gas-sensing applications
Yang et al. Ultrafine graphene nanomesh with large on/off ratio for high‐performance flexible biosensors
Mao et al. Manipulating the electronic and chemical properties of graphene via molecular functionalization
Akbar et al. Graphene synthesis, characterization and its applications in nanophotonics, nanoelectronics, and nanosensing
Jariwala et al. Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing
Huang et al. Fully printed, rapid-response sensors based on chemically modified graphene for detecting NO2 at room temperature
Liu et al. Biological and chemical sensors based on graphene materials
Alabsi et al. A review of carbon nanotubes field effect-based biosensors
Akbari et al. Brief review of monolayer molybdenum disulfide application in gas sensor
Wu et al. Wafer-scale synthesis of graphene by chemical vapor deposition and its application in hydrogen sensing
Bondavalli et al. Carbon nanotubes based transistors as gas sensors: State of the art and critical review
Du et al. InAs nanowire transistors as gas sensor and the response mechanism
Ishikawa et al. Importance of controlling nanotube density for highly sensitive and reliable biosensors functional in physiological conditions
Huang et al. Metal oxide nanowire transistors
Sreeprasad et al. Graphene quantum dots interfaced with single bacterial spore for bio-electromechanical devices: a graphene cytobot
Ghodrati et al. Carbon nanotube field effect transistors–based gas sensors
Zeng et al. Controllable fabrication of nanostructured graphene towards electronics
KR20150117945A (en) Bio sensor based upon reduced graphene oxide and method for sensing bio-material using the same
Vasilijević et al. Graphene-based materials and their applications in electrolyte-gated transistors for sensing
Bahri et al. Toward clean and crackless polymer-assisted transfer of CVD-grown graphene and its recent advances in GFET-based biosensors