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Yang et al., 2012 - Google Patents

Direct-grown air-void structure in the InGaN light-emitting diodes

Yang et al., 2012

Document ID
2057334564524570966
Author
Yang C
Lin C
Chen K
Jiang R
Lin C
Publication year
Publication venue
IEEE electron device letters

External Links

Snippet

A high-efficiency InGaN light-emitting diode (LED) structure was grown on a silane (SiH_4)- treated undoped-GaN layer with a thin in situ grown SiN_x layer and a 3-D island structure. A lateral one-step epitaxial growth process was performed on the SiH_4-treated GaN island …
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