Kron et al., 2003 - Google Patents
Influence of the built-in voltage on the fill factor of dye-sensitized solar cellsKron et al., 2003
View PDF- Document ID
- 2005930685440726827
- Author
- Kron G
- Rau U
- Werner J
- Publication year
- Publication venue
- The journal of physical chemistry B
External Links
Snippet
Dye-sensitized solar cells with different front contact materials to the nanoporous TiO2 layer are used to investigate the influence of the front contact barrier on the photovoltaic performance. The study uses devices that have SnO2: F, ZnO: Al, Al, or Au contacts …
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titan oxide 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O=[Ti]=O 0 abstract description 233
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- Y02E10/542—Dye sensitized solar cells
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- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
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