[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Mishima et al., 1982 - Google Patents

Checking of the thickness uniformity of thin-film layers in semiconductor devices by laser ellipso-interferometry

Mishima et al., 1982

Document ID
1999879708894941008
Author
Mishima T
Kao K
Publication year
Publication venue
Optical Microlithography I: Technology for the Mid-1980s

External Links

Snippet

New laser ellipso-interferometry has been developed on the basis of the principle that spatially and temporally coherent light reflected from the two surfaces of a thin solid film will interfere to form a two-dimensional fringe pattern which is directly related to the spatial …
Continue reading at www.spiedigitallibrary.org (other versions)

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical means
    • G01B11/02Measuring arrangements characterised by the use of optical means for measuring length, width or thickness
    • G01B11/06Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material
    • G01B11/0616Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material of coating
    • G01B11/0675Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material of coating using interferometry
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21Polarisation-affecting properties
    • G01N21/211Ellipsometry
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55Specular reflectivity
    • G01N21/552Attenuated total reflection
    • G01N21/553Attenuated total reflection and using surface plasmons
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21Polarisation-affecting properties
    • G01N21/23Bi-refringence
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical means
    • G01B11/24Measuring arrangements characterised by the use of optical means for measuring contours or curvatures
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00Instruments as specified in the subgroups and characterised by the use of optical measuring means
    • G01B9/02Interferometers for determining dimensional properties of, or relations between, measurement objects
    • G01B9/02055Interferometers for determining dimensional properties of, or relations between, measurement objects characterised by error reduction techniques
    • G01B9/02056Passive error reduction, i.e. not varying during measurement, e.g. by constructional details of optics
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2290/00Aspects of interferometers not specifically covered by any group under G01B9/02
    • G01B2290/70Using polarization in the interferometer
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/40Caliper-like sensors
    • G01B2210/44Caliper-like sensors with detectors on both sides of the object to be measured
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B5/00Optical elements other than lenses

Similar Documents

Publication Publication Date Title
US7177030B2 (en) Determination of thin film topography
US10151713B2 (en) X-ray reflectometry apparatus for samples with a miniscule measurement area and a thickness in nanometers and method thereof
Garcia-Caurel et al. Advanced Mueller ellipsometry instrumentation and data analysis
US6031611A (en) Coherent gradient sensing method and system for measuring surface curvature
TWI335417B (en) Method and apparatus for thin film measurement
US6753972B1 (en) Thin film thickness measuring method and apparatus, and method and apparatus for manufacturing a thin film device using the same
Reiter et al. Ellipsometric microscopy. Imaging monomolecular surfactant layers at the air-water interface
US10261014B2 (en) Near field metrology
US20090290168A1 (en) Inspecting Method and Inspecting Apparatus for Substrate Surface
JPH10507833A (en) Spectroscopic ellipsometer
US8854628B2 (en) Interferometric methods for metrology of surfaces, films and underresolved structures
US10054423B2 (en) Optical method and system for critical dimensions and thickness characterization
JPH06103252B2 (en) High resolution ellipsometer apparatus and method
US6693711B1 (en) Ellipsometer using radial symmetry
Ohlídal et al. IV: Scattering of light from multilayer systems with rough boundaries
JP2008082811A (en) Optical characteristic measuring method and optical characteristic measuring instrument for thin film
Otsuki et al. Back focal plane microscopic ellipsometer with internal reflection geometry
Mishima et al. Detection of thickness uniformity of film layers in semiconductor devices by spatially resolved ellipso-interferometry
Stoyanov Polarization interferometer as a proximity sensor
Mishima et al. Checking of the thickness uniformity of thin-film layers in semiconductor devices by laser ellipso-interferometry
Abdelsalam et al. Highly accurate film thickness measurement based on automatic fringe analysis
Vohánka et al. Optical method for determining the power spectral density function of randomly rough surfaces by simultaneous processing of spectroscopic reflectometry, variable-angle spectroscopic ellipsometry and angle-resolved scattering data
Schröder et al. Sophisticated light scattering techniques from the VUV to the IR regions
JP7471938B2 (en) Ellipsometer and semiconductor device inspection device
TWI575219B (en) Measurement method and measuring device of phase - type omni - directional angle deviation microscope