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Wang et al., 1999 - Google Patents

Assessment of Intrinsic-layer growth Temperature to High-deposition-Rate a-Si: h nip Solar Cells deposited by Hot-Wire CVD

Wang et al., 1999

Document ID
1893581757000987293
Author
Wang Q
Iwaniczko E
Xu Y
Nelson B
Mahan A
Publication year
Publication venue
MRS Online Proceedings Library (OPL)

External Links

Snippet

We report progress in hydrogenated amorphous silicon nip solar cells with the i-layer grown by the hot-wire chemical vapor deposition technique. Early research showed that we grew device-quality materials with low saturated defect density (2× 106/cm3), high initial …
Continue reading at www.cambridge.org (other versions)

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