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Steingoetter et al., 2005 - Google Patents

Deep fused silica wet etching using an Au-free and stress-reduced sputter-deposited Cr hard mask

Steingoetter et al., 2005

Document ID
1868357883182082214
Author
Steingoetter I
Fouckhardt H
Publication year
Publication venue
Journal of Micromechanics and Microengineering

External Links

Snippet

A technological process for wet chemical etching of microfluidical/microoptical elements in fused silica using a Cr hard mask is presented. The Cr layer is fabricated using sputter deposition under different Ar pressures to reduce the intrinsic stress in the hard mask. Stress …
Continue reading at iopscience.iop.org (other versions)

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICRO-STRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICRO-STRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICRO-STRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICRO-STRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of micro-structural devices or systems
    • B81C2201/01—Manufacture or treatment of micro-structural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0135—Controlling etch progression
    • B81C2201/014—Controlling etch progression by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal

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