[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Zeng et al., 2022 - Google Patents

ZnO-based electron-transporting layers for perovskite light-emitting diodes: controlling the interfacial reactions

Zeng et al., 2022

Document ID
18411872900040116398
Author
Zeng J
Qi Y
Liu Y
Chen D
Ye Z
Jin Y
Publication year
Publication venue
The Journal of Physical Chemistry Letters

External Links

Snippet

Perovskite light-emitting diodes (PeLEDs) provide new opportunities for cost-effective and large-area electroluminescent devices. It is of interest to use ZnO-based electron-transport layers (ETLs), which demonstrate superior performance in other solution-processed LEDs …
Continue reading at pubs.acs.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/52—Details of devices
    • H01L51/5203—Electrodes
    • H01L51/5206—Anodes, i.e. with high work-function material
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/0077—Coordination compounds, e.g. porphyrin
    • H01L51/0084—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/0077—Coordination compounds, e.g. porphyrin
    • H01L51/0079—Metal complexes comprising a IIIB-metal (B, Al, Ga, In or TI), e.g. Tris (8-hydroxyquinoline) gallium (Gaq3)
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/0077—Coordination compounds, e.g. porphyrin
    • H01L51/0089—Metal complexes comprising Lanthanides or Actinides, e.g. Eu
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/54—Material technologies
    • Y02E10/549—Material technologies organic PV cells
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2251/00—Indexing scheme relating to organic semiconductor devices covered by group H01L51/00
    • H01L2251/50—Organic light emitting devices
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/42—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof

Similar Documents

Publication Publication Date Title
Wang et al. Colloidal synthesis of ternary copper halide nanocrystals for high-efficiency deep-blue light-emitting diodes with a half-lifetime above 100 h
Li et al. Surface ligand engineering for near-unity quantum yield inorganic halide perovskite QDs and high-performance QLEDs
Zeng et al. ZnO-based electron-transporting layers for perovskite light-emitting diodes: controlling the interfacial reactions
Shi et al. Strategy of solution-processed all-inorganic heterostructure for humidity/temperature-stable perovskite quantum dot light-emitting diodes
Hoye et al. Identifying and reducing interfacial losses to enhance color-pure electroluminescence in blue-emitting perovskite nanoplatelet light-emitting diodes
Qin et al. Centrifugal-coated quasi-two-dimensional perovskite CsPb2Br5 films for efficient and stable light-emitting diodes
Song et al. Efficient inorganic perovskite light-emitting diodes with polyethylene glycol passivated ultrathin CsPbBr3 films
Jin et al. Balancing the electron and hole transfer for efficient quantum dot light-emitting diodes by employing a versatile organic electron-blocking layer
Wang et al. Efficient and Color-Tunable Quasi-2D CsPbBr x Cl3–x Perovskite Blue Light-Emitting Diodes
You et al. Improving efficiency and stability in quasi-2D perovskite light-emitting diodes by a multifunctional LiF interlayer
Ye et al. Operational and spectral stability of perovskite light-emitting diodes
Quintero-Bermudez et al. Ligand-induced surface charge density modulation generates local type-II band alignment in reduced-dimensional perovskites
Ke et al. Defect passivation for red perovskite light-emitting diodes with improved brightness and stability
Xiong et al. Efficient and bright blue perovskite LEDs enabled by a carbazole-phosphonic acid interface
Xu et al. Prominent heat dissipation in perovskite light-emitting diodes with reduced efficiency droop for silicon-based display
Li et al. Solid ligand-assisted storage of air-stable formamidinium lead halide quantum dots via restraining the highly dynamic surface toward brightly luminescent light-emitting diodes
Yoon et al. Performance enhancement of InP quantum dot light-emitting diodes via a surface-functionalized ZnMgO electron transport layer
Xie et al. Operational stability issues and challenges in metal halide perovskite light-emitting diodes
Gao et al. Alleviating electron over-injection for efficient cadmium-free quantum dot light-emitting diodes toward deep-blue emission
Ma et al. Rearranging the phase distribution of quasi-2D perovskite for efficient and narrow emission perovskite light-emitting diodes
Chen et al. Passivation layer of potassium iodide yielding high efficiency and stable deep red perovskite light-emitting diodes
Huang et al. Cs4PbBr6/CsPbBr3 nanocomposites for all-inorganic electroluminescent perovskite light-emitting diodes
Prakasam et al. Efficient perovskite light-emitting diodes: effect of composition, morphology, and transport layers
Song et al. Efficient thermally evaporated perovskite light-emitting devices via a bilateral interface engineering strategy
Sun et al. Lead-free zero-dimensional Zn-based metal halides of highly efficient blue luminescence from self-trapping exciton