Zhu et al., 2019 - Google Patents
Narrow-linewidth, tunable external cavity dual-band diode lasers through InP/GaAs-Si 3 N 4 hybrid integrationZhu et al., 2019
View HTML- Document ID
- 18359578098988987896
- Author
- Zhu Y
- Zhu L
- Publication year
- Publication venue
- Optics express
External Links
Snippet
We demonstrate hybridly integrated narrow-linewidth, tunable diode lasers in the InP/GaAs- Si_3N_4 platform. Silicon nitride photonic integrated circuits, instead of silicon waveguides that suffer from high optical loss near 1 µm, are chosen to build a tunable external cavity for …
- 230000003287 optical 0 abstract description 47
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
- G02B6/00—Light guides
- G02B6/10—Light guides of the optical waveguide type
- G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
- G02B6/122—Light guides of the optical waveguide type of the integrated circuit kind basic optical elements, e.g. light-guiding paths
- G02B6/1221—Light guides of the optical waveguide type of the integrated circuit kind basic optical elements, e.g. light-guiding paths made from organic materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
- G02B6/00—Light guides
- G02B6/10—Light guides of the optical waveguide type
- G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feed-back lasers (DFB-lasers)
- H01S5/125—Distributed Bragg reflector lasers (DBR-lasers)
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/146—External cavity lasers using a fiber as external cavity
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/05—Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
-
- G—PHYSICS
- G02—OPTICS
- G02F—DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
- G02F1/35—Non-linear optics
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
- G02B6/00—Light guides
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
-
- G—PHYSICS
- G02—OPTICS
- G02F—DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/30—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves using scattering effects, e.g. stimulated Brillouin or Raman effects
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Zhu et al. | Narrow-linewidth, tunable external cavity dual-band diode lasers through InP/GaAs-Si 3 N 4 hybrid integration | |
Huang et al. | High-power sub-kHz linewidth lasers fully integrated on silicon | |
Stern et al. | Compact narrow-linewidth integrated laser based on a low-loss silicon nitride ring resonator | |
Xiang et al. | Ultra-narrow linewidth laser based on a semiconductor gain chip and extended Si 3 N 4 Bragg grating | |
Tanaka et al. | High-output-power, single-wavelength silicon hybrid laser using precise flip-chip bonding technology | |
Yu et al. | Genetically optimized on-chip wideband ultracompact reflectors and Fabry–Perot cavities | |
Bernhardi et al. | Ultra-narrow-linewidth, single-frequency distributed feedback waveguide laser in Al 2 O 3: Er 3+ on silicon | |
Zilkie et al. | Power-efficient III-V/Silicon external cavity DBR lasers | |
Hulme et al. | Widely tunable Vernier ring laser on hybrid silicon | |
Yang et al. | A single adiabatic microring-based laser in 220 nm silicon-on-insulator | |
Van Rees et al. | Ring resonator enhanced mode-hop-free wavelength tuning of an integrated extended-cavity laser | |
Chi et al. | Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier | |
Bernhardi et al. | Highly efficient, low-threshold monolithic distributed-Bragg-reflector channel waveguide laser in Al 2 O 3: Yb 3+ | |
Lee et al. | Demonstration of 12.2% wall plug efficiency in uncooled single mode external-cavity tunable Si/III-V hybrid laser | |
Vissers et al. | Hybrid integrated mode-locked laser diodes with a silicon nitride extended cavity | |
Li et al. | Silicon micro-ring tunable laser for coherent optical communication | |
Kuyken et al. | A silicon-based widely tunable short-wave infrared optical parametric oscillator | |
Zhu et al. | Optical beam steering by using tunable, narrow-linewidth butt-coupled hybrid lasers in a silicon nitride photonics platform | |
Li et al. | Robust hybrid laser linewidth reduction using Si 3 N 4-based subwavelength hole defect assisted microring reflector | |
Liles et al. | Lithographic wavelength control of an external cavity laser with a silicon photonic crystal cavity-based resonant reflector | |
Iadanza et al. | Thermally stable hybrid cavity laser based on silicon nitride gratings | |
Yang et al. | Stable and wavelength-tunable silicon-micro-ring-resonator based erbium-doped fiber laser | |
Jiang et al. | Narrow-linewidth thermally tuned multi-channel interference laser integrated with a SOA and spot size converter | |
Aihara et al. | Heterogeneously integrated widely tunable laser using lattice filter and ring resonator on Si photonics platform | |
Chen et al. | 1× 8 MMI based multi-channel interference laser integrated with SOA through a 2-port multimode interference reflector |