[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Wu et al., 2021 - Google Patents

Boosting Thermoelectric Properties of AgBi3 (Se y S1–y) 5 Solid Solution via Entropy Engineering

Wu et al., 2021

Document ID
18245199637437478990
Author
Wu Y
Su X
Yang D
Zhang Q
Tang X
Publication year
Publication venue
ACS Applied Materials & Interfaces

External Links

Snippet

AgBi3S5 is an environmentally friendly n-type thermoelectric material composed of earth- abundant and nontoxic elements. It has a complex monoclinic structure with distorted NaCl- type fragments, which provide its intrinsically low thermal conductivity. However, poor …
Continue reading at pubs.acs.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/12—Selection of the material for the legs of the junction
    • H01L35/14—Selection of the material for the legs of the junction using inorganic compositions
    • H01L35/16—Selection of the material for the legs of the junction using inorganic compositions comprising tellurium or selenium or sulfur
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/28—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/34—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material

Similar Documents

Publication Publication Date Title
Wang et al. High porosity in nanostructured n-type Bi2Te3 obtaining ultralow lattice thermal conductivity
Roychowdhury et al. Ultrahigh thermoelectric figure of merit and enhanced mechanical stability of p-type AgSb1–x Zn x Te2
Tan et al. High thermoelectric performance in SnTe–AgSbTe2 alloys from lattice softening, giant phonon–vacancy scattering, and valence band convergence
Nozariasbmarz et al. Thermoelectric silicides: A review
Zhou et al. Thermoelectric properties of SnS with Na-doping
Tan et al. High thermoelectric performance SnTe–In2Te3 solid solutions enabled by resonant levels and strong vacancy phonon scattering
Berry et al. Enhancing thermoelectric performance of TiNiSn half-Heusler compounds via modulation doping
Cha et al. Ultrahigh power factor and electron mobility in n-type Bi2Te3–x% Cu stabilized under excess Te condition
Tan et al. Codoping in SnTe: enhancement of thermoelectric performance through synergy of resonance levels and band convergence
Wang et al. Thermoelectric performance of Se/Cd codoped SnTe via microwave solvothermal method
Wu et al. Boosting Thermoelectric Properties of AgBi3 (Se y S1–y) 5 Solid Solution via Entropy Engineering
Liu et al. Band and phonon engineering for thermoelectric enhancements of rhombohedral GeTe
Xu et al. Realizing improved thermoelectric performance in BiI3-doped Sb2Te3 (GeTe) 17 via introducing dual vacancy defects
Lin et al. Ultralow lattice thermal conductivity in SnTe by manipulating the electron–phonon coupling
Ghodke et al. Improved thermoelectric properties of re-substituted higher manganese silicides by inducing phonon scattering and an energy-filtering effect at grain boundary interfaces
Yao et al. High Thermoelectric Figure of Merit Achieved in Cu2S1–x Te x Alloys Synthesized by Mechanical Alloying and Spark Plasma Sintering
Wang et al. Aguilarite Ag4SSe thermoelectric material: natural mineral with low lattice thermal conductivity
Zhang et al. Phase Segregation and Superior Thermoelectric Properties of Mg2Si1–x Sb x (0≤ x≤ 0.025) Prepared by Ultrafast Self-Propagating High-Temperature Synthesis
Moshwan et al. High Thermoelectric Performance in Sintered Octahedron-Shaped Sn (CdIn) x Te1+ 2 x Microcrystals
Xie et al. Anomalously large Seebeck coefficient of CuFeS2 derives from large asymmetry in the energy dependence of carrier relaxation time
Zheng et al. Unraveling the critical role of melt-spinning atmosphere in enhancing the thermoelectric performance of p-type Bi0. 52Sb1. 48Te3 alloys
Ma et al. Enhancement of thermoelectric properties in Pd–In Co-doped SnTe and its phase transition behavior
Zhang et al. Enhanced thermoelectric and mechanical performances in sintered Bi0. 48Sb1. 52Te3–AgSbSe2 composite
Li et al. Realization of high thermoelectric performance in polycrystalline tin selenide through schottky vacancies and endotaxial nanostructuring
Lee et al. Synergistic optimization of the thermoelectric and mechanical properties of large-size homogeneous Bi0. 5Sb1. 5Te3 bulk samples via carrier engineering for efficient energy harvesting