Spickermann et al., 1996 - Google Patents
A polarization independent GaAs-AlGaAs electrooptic modulatorSpickermann et al., 1996
View PDF- Document ID
- 18170231352619672600
- Author
- Spickermann R
- Peters M
- Dagli N
- Publication year
- Publication venue
- IEEE journal of quantum electronics
External Links
Snippet
Two designs for polarization independent GaAs-AlGaAs interferometric electrooptic modulators are described. One design uses the linear electrooptic effect to couple degenerate TE/TM eigenmodes of a single-mode waveguide. In the other design the …
- 230000000051 modifying 0 title abstract description 55
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
-
- G—PHYSICS
- G02—OPTICS
- G02F—DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
- G02B6/00—Light guides
- G02B6/10—Light guides of the optical waveguide type
- G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
- G02B6/122—Light guides of the optical waveguide type of the integrated circuit kind basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02F—DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
- G02F1/35—Non-linear optics
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feed-back lasers (DFB-lasers)
- H01S5/125—Distributed Bragg reflector lasers (DBR-lasers)
-
- G—PHYSICS
- G02—OPTICS
- G02F—DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Witzens | High-speed silicon photonics modulators | |
EP0340779B1 (en) | Optical quantum interference device | |
US9733543B2 (en) | Sub-volt drive 100 GHz bandwidth electro-optic modulator | |
Mitomi et al. | Chirping characteristic and frequency response of MQW optical intensity modulator | |
Wang et al. | GaAs traveling‐wave polarization electro‐optic waveguide modulator with bandwidth in excess of 20 GHz at 1.3 μm | |
Spickermann et al. | A polarization independent GaAs-AlGaAs electrooptic modulator | |
Auracher et al. | Method for measuring the rf modulation characteristics of Mach‐Zehnder‐type modulators | |
Shelton et al. | Rib waveguide switches with MOS electrooptic control for monolithic integrated optics in GaAs-Al x Ga 1− x As | |
Liu et al. | Broadband meandered thin-film lithium niobate modulator with ultra-low half-wave voltage | |
Lin et al. | High performance waveguide uni-travelling carrier photodiode grown by solid source molecular beam epitaxy | |
US6169757B1 (en) | Intermodal phase difference controller for beam angle modulation in index guided semiconductor devices | |
Buchmann et al. | Broadband Y‐branch electro‐optic GaAs waveguide interferometer for 1.3 μm | |
Bhasker et al. | Low voltage, high optical power handling capable, bulk compound semiconductor electro-optic modulators at 1550 nm | |
JP6002066B2 (en) | Semiconductor light modulator | |
Khan et al. | Directional coupler electro‐optic modulator in AlGaAs/GaAs with low voltage‐length product | |
Obayya et al. | Optimization of the optical properties of a deeply etched semiconductor electrooptic modulator | |
Soohoo et al. | A laser-induced traveling-wave device for generating millimeter waves | |
Rahmatian et al. | An ultrahigh-speed AlGaAs-GaAs polarization converter using slow-wave coplanar electrodes | |
Walker et al. | Gallium arsenide modulator technology | |
Becker et al. | Wide‐bandwidth guided‐wave electro‐optic intensity modulator at λ= 3.39 μm | |
Katz et al. | Far-field distribution of semiconductor phase-locked arrays with multiple contacts | |
Alam et al. | Carrier dispersion modulation in a silicon strip waveguide | |
Pohl et al. | High-Bandwidth Lithium Niobate Electro-Optic Modulator at Visible-Near-Infrared Wavelengths | |
Al-Moathin et al. | Traveling-wave electroabsorption modulated laser based on identical epitaxial layer scheme and HSQ planarization | |
Hewitt et al. | Multimicron dimension optical pin modulators in silicon-on-insulator |