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Shah et al., 2000 - Google Patents

Intrinsic microcrystalline silicon (μc-Si: H) deposited by VHF-GD (very high frequency-glow discharge): a new material for photovoltaics and optoelectronics

Shah et al., 2000

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Document ID
18169345659954040268
Author
Shah A
Vallat-Sauvain E
Torres P
Meier J
Kroll U
Hof C
Droz C
Goerlitzer M
Wyrsch N
Vanecek M
Publication year
Publication venue
Materials Science and Engineering: B

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Snippet

The development of μc-Si: H technology and the introduction of intrinsic〈 i〉 μc-Si: H as photovotaically active material is retraced. Special emphasis is laid on the use of very high frequency glow discharge as a particularly propitious deposition method for μc-Si: H …
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