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Rodriguez-Davila et al., 2018 - Google Patents

Hot carrier stress investigation of zinc oxide thin film transistors with an Al2O3 gate dielectric

Rodriguez-Davila et al., 2018

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Document ID
18157345904292889405
Author
Rodriguez-Davila R
Mejia I
Quevedo-Lopez M
Young C
Publication year
Publication venue
2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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Hot carrier stress, where the gate and drain voltages were stressed simultaneously, was executed on ZnO thin-film transistors (TFTs) with different PLD ZnO or ALD Al 2 O 3 deposition parameters. The threshold voltage and transconductance were monitored where …
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    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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