[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Ohmachi et al., 1986 - Google Patents

GaAs/Ge Crystal Growth on Si and SiO2/Si Substrates

Ohmachi et al., 1986

Document ID
18142975229290231559
Author
Ohmachi Y
Shinoda Y
Oku S
Publication year
Publication venue
MRS Online Proceedings Library (OPL)

External Links

Snippet

An approach to the composite layer growth of GaAs/Ge on Si (100) and insulator–coated Si (100) has been investigated. To overcome a problem of antiphase disorder of GaAs occurring along with epitaxial growth on Ge, thermal etching on Ge surfaces in hydrogen …
Continue reading at www.cambridge.org (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/02546Arsenides
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/40AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth

Similar Documents

Publication Publication Date Title
RU2272090C2 (en) Boule of the iii-v groups element nitride used for production of substrates and the method of its manufacture and application
Fan et al. Lateral epitaxy by seeded solidification for growth of single‐crystal Si films on insulators
Bhuiyan et al. Indium nitride (InN): A review on growth, characterization, and properties
Hiruma et al. Quantum size microcrystals grown using organometallic vapor phase epitaxy
CN101467231B (en) Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template
US7125801B2 (en) Method of manufacturing Group III nitride crystal substrate, etchant used in the method, Group III nitride crystal substrate, and semiconductor device including the same
EP1176231B1 (en) Use of a boride-based substrate for growing nitride semiconductor layers thereon and semiconductor device using the same
KR102372706B1 (en) β-Ga₂O₃-BASED-SINGLE CRYSTAL SUBSTRATE
TW561652B (en) Method of manufacturing compound semiconductor substrate
Ohmachi et al. The heteroepitaxy of Ge on Si (100) by vacuum evaporation
JP4486435B2 (en) Group III nitride crystal substrate manufacturing method and etching solution used therefor
Maronchuk et al. Deposition by liquid epitaxy and study of the properties of nano-heteroepitaxial structures with quantum dots for high efficient solar cells
Kim et al. Interdiffusion problems at CdTe/InSb heterointerfaces grown by temperature gradient vapor transport deposition
Leopold et al. Photoluminescence in CdTe grown on GaAs substrates by molecular beam epitaxy
Ohmachi et al. GaAs/Ge Crystal Growth on Si and SiO2/Si Substrates
De Lyon et al. CdZnTe on Si (001) and Si (112): Direct MBE Growth for Large‐Area HgCdTe Infrared Focal‐Plane Array Applications
Chong et al. Growth of high quality GaAs layers directly on Si substrate by molecular‐beam epitaxy
US4592791A (en) Liquid phase epitaxial growth method for producing a III-V group compound semiconductor
Hemmingsson et al. Growth of III-nitrides with halide vapor phase epitaxy (HVPE)
JP7554215B2 (en) Indium phosphide substrates and semiconductor epitaxial wafers
JPH0536602A (en) Crystal growth method of hexagonal crystal semiconductor
Grundmann et al. Antiphase-domain-free InP on Si (001): Optimization of MOCVD process
Shinoda et al. Antiphase domain free epitaxial growth of GaAs on (100) Ge
Baldus et al. Hybrid molecular beam epitaxy/low-temperature liquid phase epitaxy growth of GaAs (AlGaAs) layers on Si
Sachar et al. Growth and Characterization of Pbse and Pbl-Sn1 Se Layers on Si (100)