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Higashiwaki et al., 2004 - Google Patents

InAlN/GaN heterostructure field-effect transistors grown by plasma-assisted molecular-beam epitaxy

Higashiwaki et al., 2004

Document ID
18009096433780458605
Author
Higashiwaki M
Matsui T
Publication year
Publication venue
Japanese journal of applied physics

External Links

Snippet

We report on the plasma-assisted molecular-beam epitaxy growth and device characteristics of InAlN/GaN heterostructure field-effect transistors (HFETs). The In mole fraction in InAlN was estimated to be 0.15 from the X-ray diffraction profile. The surface root-mean-square …
Continue reading at iopscience.iop.org (other versions)

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