Sun et al., 2013 - Google Patents
Small temperature coefficient of resistivity of graphene/graphene oxide hybrid membranesSun et al., 2013
- Document ID
- 1804481395370003067
- Author
- Sun P
- Zhu M
- Wang K
- Zhong M
- Wei J
- Wu D
- Zhu H
- Publication year
- Publication venue
- ACS applied materials & interfaces
External Links
Snippet
Materials with low temperature coefficient of resistivity (TCR) are of great importance in some areas, for example, highly accurate electronic measurement instruments and microelectronic integrated circuits. In this work, we demonstrated the ultrathin graphene …
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon 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 [C] 0 title abstract description 399
Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B31/00—Carbon; Compounds thereof
- C01B31/02—Preparation of carbon; Purification; After-treatment
- C01B31/04—Graphite, including modified graphite, e.g. graphitic oxides, intercalated graphite, expanded graphite or graphene
- C01B31/0438—Graphene
- C01B31/0446—Preparation
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B31/00—Carbon; Compounds thereof
- C01B31/02—Preparation of carbon; Purification; After-treatment
- C01B31/0206—Nanosized carbon materials
- C01B31/022—Carbon nanotubes
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/05—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
- H01L51/0504—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
- H01L51/0508—Field-effect devices, e.g. TFTs
- H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANO-TECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
- B82Y30/00—Nano-technology for materials or surface science, e.g. nano-composites
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
- H01L51/0045—Carbon containing materials, e.g. carbon nanotubes, fullerenes
- H01L51/0048—Carbon nanotubes
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