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Yeh et al., 2004 - Google Patents

Long wavelength MOCVD grown InGaAsN–GaAsN quantum well lasers emitting at 1.378–1.41 µm

Yeh et al., 2004

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Document ID
17991166206714118298
Author
Yeh J
Tansu N
Mawst L
Publication year
Publication venue
Electronics Letters

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Snippet

Low threshold InGaAsN QW lasers with lasing wavelength at 1.378 and 1.41 µm were demonstrated by metal organic chemical vapour deposition (MOCVD). The threshold current densities are 563 and 1930 A/cm2 for the 1.378 and 1.41 µm emitting lasers, respectively …
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    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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