Weisfield et al., 1998 - Google Patents
New amorphous-silicon image sensor for x-ray diagnostic medical imaging applicationsWeisfield et al., 1998
View PDF- Document ID
- 17966681867899947131
- Author
- Weisfield R
- Hartney M
- Street R
- Apte R
- Publication year
- Publication venue
- Medical Imaging 1998: Physics of Medical Imaging
External Links
Snippet
This paper introduces new high-resolution amorphous Silicon (a-Si) image sensors specifically configured for demonstrating film-quality medical x-ray imaging capabilities. The devices utilizes an x-ray phosphor screen coupled to an array of a-Si photodiodes for …
- 229910021417 amorphous silicon 0 title abstract description 22
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combination
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/247—Detector read-out circuitry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/243—Modular detectors, e.g. arrays formed from self contained units
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/02—Dosimeters
- G01T1/026—Semiconductor dose-rate meters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
- H04N5/357—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N5/361—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
- G01T1/2914—Measurement of spatial distribution of radiation
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/32—Transforming X-rays
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
- H04N5/369—SSIS architecture; Circuitry associated therewith
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Weisfield et al. | New amorphous-silicon image sensor for x-ray diagnostic medical imaging applications | |
US7573038B2 (en) | Radiation image pickup apparatus, radiation image pickup system, their control method and their control program | |
Antonuk et al. | Empirical investigation of the signal performance of a high‐resolution, indirect detection, active matrix flat‐panel imager (AMFPI) for fluoroscopic and radiographic operation | |
Zhao et al. | Digital radiology using active matrix readout of amorphous selenium: Construction and evaluation of a prototype real‐time detector | |
JP4307230B2 (en) | Radiation imaging apparatus and radiation imaging method | |
Antonuk et al. | Strategies to improve the signal and noise performance of active matrix, flat‐panel imagers for diagnostic x‐ray applications | |
JP3839941B2 (en) | Radiation detection apparatus and radiation detection method | |
CN101584203B (en) | Imaging array for multiple frame capture | |
CN101518056B (en) | Compensation of leakage current and residual signals for integrating detector based on direct x-ray conversion | |
JP5625833B2 (en) | Radiation detector and radiography apparatus | |
US7791032B2 (en) | Multi-mode digital imaging apparatus and system | |
US8199236B2 (en) | Device and pixel architecture for high resolution digital | |
US8792618B2 (en) | Radiographic detector including block address pixel architecture, imaging apparatus and methods using the same | |
Weisfield | Amorphous silicon TFT X-ray image sensors | |
US20040135911A1 (en) | Active pixel sensor for digital imaging | |
US20150256765A1 (en) | Charge injection compensation for digital radiographic detectors | |
CA2494602A1 (en) | Digital imaging apparatus and system | |
KR20080114590A (en) | Image detection device and method of driving image detector | |
Hoheisel et al. | Amorphous silicon X-ray detectors | |
WO2018135293A1 (en) | Radiation imaging device and radiation imaging system | |
US20110284749A1 (en) | Radiation detector | |
JP5020840B2 (en) | Image detection apparatus and image detector driving method | |
WO2014050531A1 (en) | Radiographic imaging device, radiographic imaging system, method for controlling radiographic imaging device, and radiographic imaging program | |
Street et al. | High performance amorphous silicon image sensor arrays | |
Antonuk et al. | Investigation of strategies to achieve optimal DQE performance from indirect-detection active-matrix flat-panel imagers (AMFPIs) through novel pixel amplification architectures |