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Saito et al., 2010 - Google Patents

Photoresponse properties of BaSi 2 films on N+-BaSi 2/P+-Si tunnel junction for high efficiency thin film solar cells

Saito et al., 2010

Document ID
1796526868174149362
Author
Saito T
Matsumoto Y
Suemasu T
Usami N
Publication year
Publication venue
2010 35th IEEE Photovoltaic Specialists Conference

External Links

Snippet

We have grown n+-BaSi 2/p+-Si tunnel junctions with different BaSi 2 template thicknesses on Si (111) by molecular beam epitaxy. Both the epitaxial growth and low resistance as small as 0.05 Ω· cm 2 were achieved for a bias voltage of 0.1 V when the template layer …
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
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