Ovchinnikov et al., 2022 - Google Patents
Control the shallow trap states concentration during the formation of luminescent Ag2S and Ag2S/SiO2 core/shell quantum dotsOvchinnikov et al., 2022
- Document ID
- 17855037025416224474
- Author
- Ovchinnikov O
- Perepelitsa A
- Smirnov M
- Aslanov S
- Publication year
- Publication venue
- Journal of Luminescence
External Links
Snippet
The paper presents the results of a study of shallow non-radiative trap states in colloidal Ag 2 S QDs and Ag 2 S/SiO 2 core/shell QDs, passivated with 2-mercaptopropionic acid in ethylene glycol carried out the thermally stimulated luminescence technique. For Ag 2 S …
- 230000015572 biosynthetic process 0 title abstract description 40
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; MISCELLANEOUS COMPOSITIONS; MISCELLANEOUS APPLICATIONS OF MATERIALS
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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