Butler et al., 2014 - Google Patents
Reconfigurable and non-volatile vertical magnetic logic gatesButler et al., 2014
View PDF- Document ID
- 17714837484165063720
- Author
- Butler J
- Shachar M
- Lee B
- Garcia D
- Hu B
- Hong J
- Amos N
- Khizroev S
- Publication year
- Publication venue
- Journal of Applied Physics
External Links
Snippet
In this paper, we discuss the concept and prototype fabrication of reconfigurable and non- volatile vertical magnetic logic gates. These gates consist of two input layers and a RESET layer. The RESET layer allows the structure to be used as either an and or an or gate …
- 239000010410 layer 0 abstract description 52
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift register stack stores, push-down stores
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift register stack stores, push-down stores using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift register stack stores, push-down stores using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift register stack stores, push-down stores using magnetic elements using thin films in plane structure using magnetic domain propagation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANO-TECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
- B82Y10/00—Nano-technology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
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