[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

do Amaral et al., 2021 - Google Patents

Epitaxial growth, electronic hybridization and stability under oxidation of monolayer MoS2 on Ag (1 1 1)

do Amaral et al., 2021

View PDF
Document ID
17746994667304861161
Author
do Amaral G
da Costa Tonon I
Román R
de Oliveira Plath H
Taniguchi T
de Lima L
Zagonel L
Landers R
de Siervo A
Publication year
Publication venue
Applied Surface Science

External Links

Snippet

The plethora of new transition metal dichalcogenides (TMDs) materials have attracted a major attention during the last years due to a diversity of new possibilities of applications in different areas from electronic and photonic devices to new sensors and catalysts, as well as …
Continue reading at www.academia.edu (PDF) (other versions)

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00—Carbon; Compounds thereof
    • C01B31/02—Preparation of carbon; Purification; After-treatment
    • C01B31/04—Graphite, including modified graphite, e.g. graphitic oxides, intercalated graphite, expanded graphite or graphene
    • C01B31/0438—Graphene
    • C01B31/0446—Preparation
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y30/00—Nano-technology for materials or surface science, e.g. nano-composites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y40/00—Manufacture or treatment of nano-structures

Similar Documents

Publication Publication Date Title
Sun et al. Chemical vapour deposition
Uchida et al. Controlled growth of large-area uniform multilayer hexagonal boron nitride as an effective 2D substrate
Lupan et al. Synthesis and characterization of ZnO nanowires for nanosensor applications
Cong et al. Synthesis and optical properties of large-area single-crystalline 2D semiconductor WS2 monolayer from chemical vapor deposition
Yang et al. Interlayer interactions in 2D WS 2/MoS 2 heterostructures monolithically grown by in situ physical vapor deposition
Shahzad et al. Effects of temperature and pressure on sulfurization of molybdenum nano-sheets for MoS2 synthesis
do Amaral et al. Epitaxial growth, electronic hybridization and stability under oxidation of monolayer MoS2 on Ag (1 1 1)
Kobayashi et al. Bandgap-tunable lateral and vertical heterostructures based on monolayer Mo 1-x W x S 2 alloys
Tiwari et al. Optical and electrical tunability in vertically aligned MoS2 thin films prepared by DC sputtering: Role of film thickness
Uchida et al. Chemical vapor deposition growth of uniform multilayer hexagonal boron nitride driven by structural transformation of a metal thin film
McCreary et al. Synthesis of high-quality monolayer MoS2 by direct liquid injection
Raju et al. Influence of chemical potential on shape evolution of 2D-MoS2 flakes produced by chemical vapor deposition
Liu et al. Direct imaging of the nitrogen-rich edge in monolayer hexagonal boron nitride and its band structure tuning
Stoica et al. Vapor transport growth of MoS 2 nucleated on SiO 2 patterns and graphene flakes
Kumar et al. Scalable faceted voids with luminescent enhanced edges in WS 2 monolayers
Calvo-Mola et al. Temperature dependence of Raman and photoluminescence spectra of pure and high-quality MoO3 synthesized by hot wall horizontal thermal evaporation
Liu et al. Morphological and structural evolutions of α-MoO3 single crystal belts towards MoS2/MoO2 heterostructures upon post-growth thermal vapor sulfurization
Marye et al. Thermal stability, work function and Fermi level analysis of 2D multi-layered hexagonal boron nitride films
Papanai et al. Role of processing parameters in CVD grown crystalline monolayer MoSe 2
Sharma et al. Pressure-dependent large area synthesis and electronic structure of MoS2
Wang et al. Self-organization of various “phase-separated” nanostructures in a single chemical vapor deposition
Chubarov et al. Wafer-scale epitaxial growth of single orientation WS2 monolayers on sapphire
Kasirga Chemical vapor transport synthesis of a selenium-based two-dimensional material
Nazarova Chemical Vapour Deposition (CVD) of Graphene on Transition Metals and Its Protective Properties
Hossen et al. Quantitative Defect Analysis in CVD‐Grown Monolayer MoS2 via In‐Plane Raman Vibration