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Lu et al., 1995 - Google Patents

Fourier transform infrared study of rapid thermal annealing of a‐Si: N: H (D) films prepared by remote plasma‐enhanced chemical vapor deposition

Lu et al., 1995

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Document ID
17603295473212856447
Author
Lu Z
Santos‐Filho P
Stevens G
Williams M
Lucovsky G
Publication year
Publication venue
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

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Fourier transform infrared spectroscopy has been used to study the behavior of bonded hydrogen and bonded deuterium in hydrogenated amorphous silicon nitride films [a‐Si: N: H (D)] that were deposited by remote plasma‐enhanced chemical vapor deposition (RPECVD) …
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