[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Heiss et al., 2011 - Google Patents

Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures

Heiss et al., 2011

View PDF
Document ID
17230525271772166470
Author
Heiss M
Conesa-Boj S
Ren J
Tseng H
Gali A
Rudolph A
Uccelli E
Peiró F
Morante J
Schuh D
Reiger E
Kaxiras E
Arbiol J
Fontcuberta i Morral A
Publication year
Publication venue
Physical Review B—Condensed Matter and Materials Physics

External Links

Snippet

A method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by photoluminescence …
Continue reading at arxiv.org (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/122—Single quantum well structures
    • H01L29/127—Quantum box structures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y10/00—Nano-technology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Similar Documents

Publication Publication Date Title
Heiss et al. Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
Carnevale et al. Three-dimensional GaN/AlN nanowire heterostructures by separating nucleation and growth processes
Henini Molecular beam epitaxy: from research to mass production
De La Mata et al. A review of MBE grown 0D, 1D and 2D quantum structures in a nanowire
Bolshakov et al. Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si
Li et al. Advances in III-V semiconductor nanowires and nanodevices
Zhou et al. Using seed particle composition to control structural and optical properties of GaN nanowires
Shafa et al. Indium antimonide nanowires: synthesis and properties
Zhou et al. Crystal-phase control of GaAs–GaAsSb core–shell/axial nanowire heterostructures by a two-step growth method
Mukherjee et al. Tuning of near infrared excitonic emission from InAs quantum dots by controlling the sub-monolayer coverage
Daudin et al. The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes
Wildeson et al. III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy
Gao et al. Growth and properties of III–V compound semiconductor heterostructure nanowires
Ra et al. Growth characteristics of uniaxial InGaN/GaN MQW/n-GaN nanowires on Si (111) using MOCVD
US20140345686A1 (en) High-throughput continuous gas-phase synthesis of nanowires with tunable properties
Chang et al. Atom probe tomography of nanoscale architectures in functional materials for electronic and photonic applications
Callsen et al. Probing alloy formation using different excitonic species: the particular case of InGaN
Zhou et al. Phase purification of GaAs nanowires by prolonging the growth duration in MBE
Yan et al. Realization of Stranski–Krastanow InAs quantum dots on nanowire-based InGaAs nanoshells
Zhou et al. Transmission electron microscopy (TEM) studies of functional nanomaterials
Hajer et al. Selective area grown ZnTe nanowires as the basis for quasi-one-dimensional CdTe-HgTe multishell heterostructures
Knutsson Atomic scale characterization of III-V nanowire surfaces
Schupp et al. Growth of cubic GaN quantum dots
Dheeraj et al. Heterostructured III-V Nanowires with Mixed Crystal Phases Grown by Au-assisted Molecular Beam Epitaxy
Gao Understanding the growth of III-V semiconductor nanowires with component addition in metal-organic chemical vapor deposition