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Poblenz et al., 2007 - Google Patents

Power performance of AlGaN/GaN HEMTs grown on SiC by ammonia-MBE at 4 and 10 GHz

Poblenz et al., 2007

Document ID
17224318741252601194
Author
Poblenz C
Corrion A
Recht F
Suh C
Chu R
Shen L
Speck J
Mishra U
Publication year
Publication venue
IEEE electron device letters

External Links

Snippet

In this letter, we report on the microwave power and efficiency performance of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by ammonia molecular beam epitaxy (ammonia-MBE) on SiC substrates. At 4 GHz, an output power density of 11.1 W/mm with an …
Continue reading at ieeexplore.ieee.org (other versions)

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