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Sun et al., 1999 - Google Patents

Aluminum titanium nitride films grown with multiple precursors

Sun et al., 1999

Document ID
172876244809267836
Author
Sun Y
Endle J
Ekerdt J
Russell N
Healy M
White J
Publication year
Publication venue
Materials Science in Semiconductor Processing

External Links

Snippet

Metallorganic chemical vapor deposition (MOCVD) of AlxTi1− xN films was investigated at 200 to 400° C using terakis (dimethylamino) titanium (TDMAT), dimethylaluminum hydride (DMAH), triethylaluminum (TEA) and dimethylhydrazine (DMH). The film composition was …
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