Zhu et al., 2013 - Google Patents
Efficiency droop improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum wellsZhu et al., 2013
View PDF- Document ID
- 17100728949983831123
- Author
- Zhu L
- Liu W
- Zeng F
- Gao Y
- Liu B
- Lu Y
- Chen Z
- Publication year
- Publication venue
- IEEE Photonics Journal
External Links
Snippet
InGaN/GaN light-emitting diodes (LEDs) with a graded-composition multiple quantum well (GQW) were designed not only to investigate the effect of polarization field on the efficiency droop in InGaN/GaN multiple quantum wells (MQWs) but to find out possible solutions to …
- 229910002601 GaN 0 title abstract description 43
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